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FDP6644/FDB6644
June 2001
FDP6644/FDB6644
30V N-Channel PowerTrench(R) MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
* 50 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V RDS(ON) = 10.5 m @ VGS = 4.5 V * Low gate charge (27 nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) * 175C maximum junction temperature rating
D
D
G
G D TO-220 S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 16
(Note 1) (Note 1)
Units
V V A A W W/C C
50 150 83 0.55 -65 to +175
Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.8 62.5 C/W C/W
Package Marking and Ordering Information
Device Marking FDB6644 FDP6644 Device FDB6644 FDP6644 Reel Size 13'' Tube Tape width 24mm n/a Quantity 800 units 45
(c)2001 Fairchild Semiconductor Corporation
FDP6644 Rev C(W)
FDP6644/FDB6644
Electrical Characteristics
Symbol
W DSS IAR
TA = 25C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VDD = 15 V, ID = 25 A
Min
Typ
Max Units
240 25 mJ A
Drain-Source Avalanche Ratings (Note 1)
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 16 V, VGS = -16 V, VGS = 0 V VDS = 0 V VDS = 0 V 30 26 1 100 -100 V mV/C A NA NA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 25A VGS = 4.5 V, ID = 25 A VGS= 10 V, ID = 25 A, TJ=125C VGS = 10 V, VDS = 5 V, VDS = 5 V ID = 25 A
1
1.5 -5 6.4 7.3 9.3
3
V mV/C
8.5 10.5 15
m
ID(on) gFS
60 98
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
3068 513 196
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
12.5 8 54 14
22.5 16 86 26 38
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 4.5 V
ID = 25 A,
27 9 7
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 25 A Voltage 50
(Note 2)
A V
0.8
1.3
Notes: 1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDP6644 Rev C(W)
FDP6644/FDB6644
Typical Characteristics
50
2
6.0V
ID, DRAIN CURRENT (A) 40
3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
4.5V
1.8
VGS = 3.0V
1.6 1.4
30
20
3.5V
1.2 1 0.8
2.5V
10
4.0V 4.5V 6.0V 10V
0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.02 RDS(ON) , ON-RESISTANCE (OHM)
2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.8
ID =25A VGS = 10V
ID = 12A
0.016
1.4
TA = 125 C
0.012
o
1
0.6
0.008
TA = 25 C
0.004 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
o
0.2 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with Temperature.
80
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = 5V ID, DRAIN CURRENT (A) 60
TA = -55oC
25 C 125oC
o
VGS = 0V
10
TA = 125 C
1
o
25 C
0.1
o
40
-55 C
0.01 0.001 0.0001
o
20
0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP6644 Rev C(W)
FDP6644/FDB6644
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 25A 8 VDS = 5V 15V 10V CAPACITANCE (pF)
4200 3500 CISS 2800 2100 1400 700 CRSS 0 0 10 20 30 40 50 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) f = 1MHz VGS = 0 V
6
4
COSS
2
0
Figure 7. Gate Charge Characteristics.
1000 P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
1000 SINGLE PULSE RJC = 1.8C/W TC = 25C
ID, DRAIN CURRENT (A)
800
100
RDS(ON) LIMIT
DC 10 VGS = 10V SINGLE PULSE o RJC = 1.8 C/W TC = 25oC 1 0.1 1
1s
1ms 100us 10ms 100ms
600
400
200
10
100
0 0.0001
0.001
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE
RJC(t) = r(t) + RJC RJC = 1.8 C/W P(pk) t1 t2 TJ - TC = P * RJC(t) Duty Cycle, D = t1 / t2
0.1
0.01 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design.
FDP6644 Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM
STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H3

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